Electromagnetic control of valley splitting in ideal and disordered Si quantum dots

@article{Hosseinkhani2020ElectromagneticCO,
  title={Electromagnetic control of valley splitting in ideal and disordered Si quantum dots},
  author={A. Hosseinkhani and G. Burkard},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2020}
}
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as well as the quantum dot geometry for both ideal and disordered Si/SiGe interfaces. We theoretically model a realistic electrostatically defined quantum dot and find the exact ground and excited states for the out-of-plane electron motion. This enables us to… Expand
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