Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

@inproceedings{Cheng2014ElectroluminescenceAP,
  title={Electroluminescence and Photocurrent Generation from
Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes},
  author={Rui Cheng and Dehui Li and Hailong Zhou and Chen Jun Wang and Anxiang Yin and Shan Jiang and Yuan Liu and Yu Chen and Yu Huang and Xiangfeng Duan},
  booktitle={Nano letters},
  year={2014}
}
The p-n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p-n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2… CONTINUE READING
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arXiv:1403.4985. arXiv.org e-Print archive

  • Kim
  • 2014

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