Electroluminescence Microscopy of Cross-Sectioned AlGaN/GaN High-Electron Mobility Transistors


We report an electroluminescence (EL) microscopy study of operating cross-sectioned AlGaN/GaN high-electron mobility transistors. By examining devices in a cross-sectional view, the distribution and intensity of photons emitted from underneath the optically opaque metal of the gate and drain structures can be studied. The location and the shape of EL bright… (More)


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