Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

@inproceedings{Baeumler2014ElectroluminescenceIO,
  title={Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications},
  author={M. Baeumler and Vladimir M. Polyakov and Frank G{\"u}tle and M. Dammann and F. Benkhelifa and Patrick Waltereit and Richard Reiner and Samuel M{\"u}ller and Matthias Wespel and Ridiger Quay and Michael Mikulla and Jennifer R. Wagner and Oliver Ambacher},
  year={2014}
}
The lifetime and stability of AlGaN/GaN heterostructure eld e ect transistors at high power levels can be enhanced by introducing eld plates to reduce electric eld peaks in the gate drain region. Simulations of the electric eld distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric eld peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided… CONTINUE READING

Citations

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With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

Martina Baeumler, Michael Dammann, +20 authors Thomas Roedle
  • SPIE NanoScience + Engineering
  • 2015

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