Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.

Abstract

Zinc-tin oxide (ZTO) thin-film transistors (TFTs) were fabricated using an electrohydrodynamic-jet (EHD-jet) printing technique at annealing temperatures ranging from 300 to 500 °C. An EHD-jet-printed ZTO active layer was patterned with a 60 μm width using a 100 μm inner diameter metal nozzle. The electrical properties of an EHD-jet-printed ZTO TFT showed a mobility of 9.82 cm(2)/(V s), an on-off current ratio of 3.7 × 10(6), a threshold voltage of 2.36 V, and a subthreshold slope of 0.73 V/dec at 500 °C. Significantly improved properties were obtained compared to the spin-coated and inkjet-printed ones. Better hysteresis behavior and positive bias stability of the ZTO TFTs were also achieved using EHD-jet printing technology.

DOI: 10.1021/am5009826

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Cite this paper

@article{Lee2014ElectrohydrodynamicJZ, title={Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.}, author={Yong Gu Lee and Woon-Seop Choi}, journal={ACS applied materials & interfaces}, year={2014}, volume={6 14}, pages={11167-72} }