Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells

Abstract

We calculate the high-speed modulation properties of an electroabsorption modulator for lambda=1.55 mum based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma=100 meV we obtain an RC-limited electrical f<sub>3dB</sub>~60 GHz at an applied voltage swing V<sub>pp… (More)

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Cite this paper

@article{Holmstrom2006ElectroabsorptionMU, title={Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells}, author={Petter Holmstrom}, journal={IEEE Journal of Quantum Electronics}, year={2006}, volume={42}, pages={810-819} }