Electro-thermal transient simulation of silicon carbide power MOSFET

@article{Pushpakaran2013ElectrothermalTS,
  title={Electro-thermal transient simulation of silicon carbide power MOSFET},
  author={Bejoy N. Pushpakaran and Stephen B. Bayne and Aderinto A. Ogunniyi},
  journal={2013 19th IEEE Pulsed Power Conference (PPC)},
  year={2013},
  pages={1-6}
}
This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco© ATLAS Technology Computer-Aided Design (TCAD) physics based simulation software. Physics based models were used to accurately model electrical device… CONTINUE READING
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