Electrically erasable and reprogrammable read-only memory using the n-channel SIMOS one-transistor cell

@article{Rossler1977ElectricallyEA,
  title={Electrically erasable and reprogrammable read-only memory using the n-channel SIMOS one-transistor cell},
  author={B. Rossler},
  journal={IEEE Transactions on Electron Devices},
  year={1977},
  volume={24},
  pages={606-610}
}
  • B. Rossler
  • Published 1977
  • Engineering
  • IEEE Transactions on Electron Devices
  • The stacked-gate injection MOS transistor (SIMOS) uses a control gate stacked on the floating gate for selection of the cell during reading, programming, and erasure. Programming is achieved by the injection of hot electrons from the channel into the floating gate, resulting in a large upward shift in threshold voltage. In both states, operation is in the enhancement mode. Electrical erasure can be performed by injection of hot holes from an avalanche breakdown at the source-substrate junction… CONTINUE READING
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