Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure

@article{Iizuka1976ElectricallyAA,
  title={Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure},
  author={Hisakazu Iizuka and F. Masuoka and Tai Sato and M. Ishikawa},
  journal={IEEE Transactions on Electron Devices},
  year={1976},
  volume={23},
  pages={379-387}
}
  • Hisakazu Iizuka, F. Masuoka, +1 author M. Ishikawa
  • Published 1976
  • Materials Science
  • IEEE Transactions on Electron Devices
    • Design theory and experimental results of the WRITE and ERASE properties of a rewritable and nonvolatile avalanche-injection-type memory are reported. The memory transistor has the stacked-gate structure of a floating gate and a control gate. The threshold-voltage shift of the transistor due to injected charge is controlled by applied potential on the control gate which reduces the avalanche breakdown voltage of the drain junction and accelerates electron injection into the floating gate. The… CONTINUE READING
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