Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure

  title={Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure},
  author={Hisakazu Iizuka and Fujio Masuoka and Tai Sato and Masaoki Ishikawa},
  journal={IEEE Transactions on Electron Devices},
Design theory and experimental results of the WRITE and ERASE properties of a rewritable and nonvolatile avalanche-injection-type memory are reported. The memory transistor has the stacked-gate structure of a floating gate and a control gate. The threshold-voltage shift of the transistor due to injected charge is controlled by applied potential on the control gate which reduces the avalanche breakdown voltage of the drain junction and accelerates electron injection into the floating gate. The… 

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  • W. Gosney
  • Engineering
    IEEE Transactions on Electron Devices
  • 1977
Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional

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