Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting

@article{Scarpulla2008ElectricalTA,
  title={Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting},
  author={Michael A. Scarpulla and Rouin Farshchi and Peter R. Stone and Rajesh Vilas Chopdekar and K. M. Yu and Yoshiko Suzuki and Oscar D. Dubon},
  journal={Journal of Applied Physics},
  year={2008},
  volume={103},
  pages={073913-073913}
}
We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1−xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1−xMnxAs films have all of the characteristic signatures of the strong p‐d interaction of holes and Mn ions observed in the dilute hole-mediated… 
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