Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO 2

@inproceedings{Agustsson2007ElectricalRA,
  title={Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO 2},
  author={Jon S Agustsson and Unnar B Arnalds and Arni Sigurdur Ingason and Kristinn B. Gylfason and Kelsey D. Johnsen and S. {\'O}lafsson and Jon Tomas Gudmundsson},
  year={2007}
}
Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250◦C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250◦C. The electrical resistivity increases… CONTINUE READING