Electrical properties study of Ni (Pt)-silicide/Si contacts

Abstract

The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity

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Cite this paper

@article{Huang2006ElectricalPS, title={Electrical properties study of Ni (Pt)-silicide/Si contacts}, author={Yi-Fei Huang and Yu-Long Jiang and Guo-Ping Ru and Fang Lu and Qijia Cai and Shihai Cao and Bing-Zong Li}, journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings}, year={2006}, pages={475-477} }