Electrical properties of polysilicon nanowires for devices applications

@inproceedings{Demami2011ElectricalPO,
  title={Electrical properties of polysilicon nanowires for devices applications},
  author={F. Demami and R. Rogel and A. C. Sala{\"u}n and L. Pichon},
  year={2011}
}
Polysilicon nanowires are synthesized using the well known and low cost technique commonly used in microelectronic industry: the sidewall spacer formation technique. Polysilicon layer is deposited by Low Pressure Chemical Vapour Deposition technique on SiO2 wall patterned by conventional UV lithography technique. Polysilicon film is then plasma etched. Accurate control of the etching rate leads to the formation of nanometric size sidewall spacers with a curvature radius as low as 100nm used as… CONTINUE READING