Electrical properties of In/Yb/n-Hg1 − xCdxTe contacts

@article{Leech1994ElectricalPO,
  title={Electrical properties of In/Yb/n-Hg1 − xCdxTe contacts},
  author={Patrick W. Leech},
  journal={Journal of Materials Science: Materials in Electronics},
  year={1994},
  volume={5},
  pages={226-228}
}
The specific contact resistance, ϱc, and the modified sheet Rsk, of In/Hg1 − xCdxTe contacts incorporating a Yb diffusion barrier were measured as a function of the layer thickness and composition (x = 0.32–0.65). Significant increases in ϱc, were evident only for x ≥ 0.56 and at Yb thicknesses between 2.5 and 6.0 nm, depending on the x-value. Analytical examination of the interfaces by Rutherford backscattering spectrometry (RBS) also showed a progressive reduction in the extent of inward… CONTINUE READING