Electrical modeling for laser testing with different pulse durations

@article{Douin2005ElectricalMF,
  title={Electrical modeling for laser testing with different pulse durations},
  author={Alexandre Douin and Vincent Pouget and Dean Lewis and Pascal Fouillat and Philippe Perdu},
  journal={11th IEEE International On-Line Testing Symposium},
  year={2005},
  pages={9-13}
}
This paper presents a simple electrical model of laser-induced currents in a single MOS transistor for different laser pulse durations. This model is validated by mixed-mode device simulations of a laser-induced fault in an SRAM cell for different laser pulse durations ranging from 100fs to 10ns. This model can be used for netlist level simulation of pulsed laser online testing in the context of radiation hardening, semi-invasive attacks, or more generally, hardware level fault injection… CONTINUE READING

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