Electrical detection of spin precession in a metallic mesoscopic spin valve

  title={Electrical detection of spin precession in a metallic mesoscopic spin valve},
  author={Friso Jedema and Hubert B. Heersche and A. T. Filip and Jochem J. A. Baselmans and Bart Jan van Wees},
To study and control the behaviour of the spins of electrons that are moving through a metal or semiconductor is an outstanding challenge in the field of ‘spintronics’, where possibilities for new electronic applications based on the spin degree of freedom are currently being explored. Recently, electrical control of spin coherence and coherent spin precession during transport was studied by optical techniques in semiconductors. Here we report controlled spin precession of electrically injected… 
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  • Materials Science
  • 2004
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The processing of quantum information based on the electron spin degree of freedom requires fast and coherent manipulation of local spins. One approach is to provide spatially selective tuning of the
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The importance of spin-transport phenomena in condensed-matter physics has increased over the past decade with the advent of metallic giant-magnetoresistive systems and spin-valve transistors. An
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Conductance modulation by spin precession in noncollinear ferromagnet normal-metal ferromagnet systems
conductance of the system in the presence of a magnetic field can be asymmetric with respect to time reversal. The total conductance changes nonmonotonically with the magnetic field strength for
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We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed
Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals.
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    Physical review letters
  • 1985
Application of small static magnetic fields results in a Hanle effect which permits determination of the spin-relaxation time, and the unique features of the method should make it applicable to a wide range of studies.
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This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.