Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.

@article{Zhang2015ElectricalCO,
  title={Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.},
  author={Kun Zhang and Yan-ling Cao and Yue‐Wen Fang and Qiang Li and Jie Zhang and Chun‐Gang Duan and Shishen Yan and Yufeng Tian and Rong Huang and Rongkun Zheng and Shishou Kang and Yanxue Chen and Guolei Liu and Liang-Mo Mei},
  journal={Nanoscale},
  year={2015},
  volume={7 14},
  pages={
          6334-9
        }
}
Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom… 

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