Electrical conductivity and oxygen diffusivity in Cu- and Ga-doped Pr2NiO4

@inproceedings{Hyodo2014ElectricalCA,
  title={Electrical conductivity and oxygen diffusivity in Cu- and Ga-doped Pr2NiO4},
  author={Junji Hyodo and Ken Tominaga and Young-Wan Ju and Shintaro Ida and Tatsumi Ishihara},
  year={2014}
}
Abstract Oxygen diffusivity in Cu- and Ga-doped Pr 2 NiO 4 + δ was investigated with tracer diffusion and secondary ion mass spectroscopy (SIMS) analysis in order to estimate the oxide ion conductivity. Doping Ni sites in Pr 2 NiO 4 with Cu and Ga doubles the oxygen diffusivity, and the measured activation energy for diffusion is 0.64 ± 0.04 eV for Pr 1.9 Ni 0.75 Cu 0.25 O 4 + δ and 0.57 ± 0.05 eV for Pr 1.9 (Ni 0.75 Cu 0.25 ) 0.95 Ga 0.05 O 4 + δ . This result suggests that the diffusion… CONTINUE READING
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