Corpus ID: 138276625

Electrical characterization of process and irradiation induced defects in GaAs

@inproceedings{Tunhuma2016ElectricalCO,
  title={Electrical characterization of process and irradiation induced defects in GaAs},
  author={Shandirai Malven Tunhuma},
  year={2016}
}
Electrical characterization of process and irradiation induced defects in GaAs by Shandirai Malven Tunhuma Supervisor: Prof. Mmantsae Diale Co-supervisor: Prof. F. Danie Auret Gallium arsenide (GaAs) technology leads the implementation of high frequency devices with superior performance. A vast number of optoelectronic applications are based on the material owing to its direct and wide bandgap. Over the years the number of these applications continues to grow but they remain highly cost… Expand

References

SHOWING 1-10 OF 82 REFERENCES
Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
Abstract Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices usingExpand
Summary of Schottky barrier height data on epitaxially grown n- and p-GaAs
The Schottky barrier height values, as determined by the current‐voltage and capacitance ‐voltage techniques, of 43 metals which were fabricated by following the same cleaning procedure and using theExpand
Effects of copper diffusion in gallium arsenide solar cells for space applications
Abstract High efficiency, thin-film Epitaxial Lift-Off (ELO) III–V solar cells offer excellent characteristics for implementation in flexible solar panels for space applications. However, the currentExpand
Ruthenium and ruthenium-based contacts to GaAs
This paper deals with the outstanding electrical and structural properties of Ru-based Schottky and ohmic contacts fabricated by electron beam evaporation on n- and p+ -type GaAs, respectively. TheExpand
The origin of defects induced in ultra-pure germanium by Electron Beam Deposition
The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detailExpand
Annealing studies on Pd/n-GaAs Schottky diodes
Pd/n-GaAs Schottky diodes were fabricated by using either spin-on or evaporated Pd sources. Initial electrical characteristics of both types of Schottky diode revealed little difference in theirExpand
A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range
Abstract In order to obtain the detailed information on the conduction mechanisms of the Au/n-GaAs Schottky barrier diode (SBD), the current–voltage ( I – V ) characteristics were carried out in theExpand
On the electrical characteristics of Au/n-type GaAs Schottky diode
Abstract The temperature dependence of the electrical properties of Au/n-type GaAs Schottky contacts have been studied using current–voltage (I–V) and capacitance–voltage (C–V) over a wideExpand
Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n‐GaAs Schottky contacts
Schottky barrier diodes (SBDs) were fabricated on epitaxially grown n‐GaAs materials, with different free carrier densities, by electron beam (e‐beam) evaporation of Pt at various rates. The qualityExpand
GaAs-Ge materials integration for electronic and photonic applications
  • C. Chia, A. Sridhara, +4 authors D. Chi
  • Materials Science
  • 2008 5th IEEE International Conference on Group IV Photonics
  • 2008
Antiphase domain defects free GaAs layers grown on Ge(100) offcut substrates with and without an ultra thin AlAs interfacial layer were investigated. SIMS measurements suggest cross-diffusion of Ge,Expand
...
1
2
3
4
5
...