Electrical characterization method to study barrier integrity in 3D through-silicon vias

@article{Li2012ElectricalCM,
  title={Electrical characterization method to study barrier integrity in 3D through-silicon vias},
  author={Y.-L. Li and Dimitrios Velenis and Thomas Kauerauf and Michele Stucchi and Yann Civale and A. Redolfi and Kristof Croes},
  journal={2012 IEEE 62nd Electronic Components and Technology Conference},
  year={2012},
  pages={304-308}
}
In this paper, the controlled I-V (IVctrl) method is adopted for the barrier integrity characterization of TSVs at wafer level. Planar capacitor structures are used for the initial validation of the IVctrl method with respect to the traditional time dependent dielectric breakdown (TDDB) methodology. The TDDB field acceleration factor of the TSV liner is extracted by IVctrl in a reasonable time, and the results demonstrate that defective barriers can degrade TDDB field acceleration factor and… CONTINUE READING
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References

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Tőkei, “Interconnect reliability – A study of the effect of dimensional and porosity scaling,

  • K. Croes, C. J. Wilson, M. Lofrano, G. P. Beyer, Zs
  • Microelectronic Engineering, Vol
  • 2011
Highly Influential
4 Excerpts

Zs

  • L. Zhao
  • Tőkei, G. Gianni, H. Volders, and G. Beyer, "A…
  • 2009
1 Excerpt

et al, , “3D stacked IC demonstration using a through Silicon Via First approach,” Proc

  • J. Van Olme
  • International Electron Devices Meeting, Dec.
  • 2008

Process integration for through-silicon vias,

  • S. Spiesshoefer, Z. Rahman, G. Vangara, S. Polamreddy, S. Burkett, L. Schaper
  • Journal of Vacuum Science & Technology A,
  • 2005
1 Excerpt

Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits,

  • G. S. Haase, E. T. Ogawa, J. W. McPherson
  • Journal of Applied Physics,
  • 2005
2 Excerpts

Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon,

  • Andrei A. Istratov, Christoph Flink, Henry Hieslmair, Eicke R. Weber
  • Physical Review Letters,
  • 1998
1 Excerpt

Istratov , Christoph Flink , Henry Hieslmair , and Eicke R . Weber , " Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon

  • A. Andrei
  • 1998

Time dependent dielectric breakdown in thin oxides: mechanisms, statistics and oxide reliability prediction

  • R. Degraeve
  • 1998
1 Excerpt

Tantalum as a diffusion barrier between copper and silicon,

  • K. Holloway, P. M. Fryer
  • Applied Physics Letters,
  • 1990

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