Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature

@article{Wilk1999ElectricalCO,
  title={Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature},
  author={G. D. Wilk and Berinder Brar},
  journal={IEEE Electron Device Letters},
  year={1999},
  volume={20},
  pages={132-134}
}
We have developed a method for controllably and reproducibly growing self-limiting ultrathin oxides with excellent electrical properties in the range /spl sim/10-25 /spl Aring/ thick at temperatures ranging from 25 to 600/spl deg/C, respectively, using an ultraviolet ozone (UVO/sub 3/) oxidation process. The self-limiting thickness depends primarily on the substrate temperature, allowing ultrathin oxide growth with precision and reproducibility using this UVO/sub 3/ process. Oxides grown by… CONTINUE READING