Electrical behavior of ultra-thin body silicon-on-insulator n-MOSFETs at a high operating temperature

@inproceedings{Kim2009ElectricalBO,
  title={Electrical behavior of ultra-thin body silicon-on-insulator n-MOSFETs at a high operating temperature},
  author={Seong-Je Kim and T. H. Shim and Jea-Gun Park},
  year={2009}
}
Recessed ultra-thin body (UTB) silicon-on-insulator (SOI) n-meta-oxide-semiconductor field-effect transistors (MOSFETs) with a top silicon thickness of less than 10 nm were successfully fabricated. We investigated the dependence of their electrical characteristics, such as subthreshold conduction and effective mobility, on the operating temperature the different channel thicknesses of less than 10 nm. In the case of a 4.5-nm-channel UTB SOI n-MOSFET, it was observed that as the temperature… CONTINUE READING