Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Abstract

Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Spatial distribution of structural degradation under high-power stress… (More)

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