Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

@inproceedings{Xie1999ElectricalAO,
  title={Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2},
  author={Qianghua Xie and Joseph Van Nostrand and Russell L. Jones and J. R. Sizelove and Jr. D. C. Look},
  year={1999}
}
Abstract In this paper, we report on the electrical and optical properties of undoped GaSb samples grown by MBE using Sb 1 as well as Sb 2 produced in a conventional antimony cracker. We establish the existence of Sb 1 and then extract the mole fraction of Sb 1 in the antimony beam as a function of the cracking zone temperature based on a combined analysis of mass spectrometry data and ion gauge flux reading. We find that the Sb 1 mole fraction becomes greater than 90% for cracking zone… CONTINUE READING