Electrical and optical properties of Ni/sup 3+/ in p-type InP

@article{Korona1991ElectricalAO,
  title={Electrical and optical properties of Ni/sup 3+/ in p-type InP},
  author={K. Korona and G. Bremond and A. M. Hennel},
  journal={[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials},
  year={1991},
  pages={323-326}
}
Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni… CONTINUE READING