Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide device

Abstract

The electrical characteristics of the tantalum oxide-silicon dioxide double-dielectric structure are described. The MTOS structure (metal-tantalum oxide-silicon dioxide-silicon) is similar to the MNOS double dielectric which is used as a nonvolatile memory element except tantalum oxide (Ta2O5) is used to replace the silicon nitride as the second dielectric… (More)

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