Electrical and Reliability Characteristics of HfLaTiO-Gated Metal–Oxide–Semiconductor Capacitors With Various Ti Concentrations

@article{Cheng2012ElectricalAR,
  title={Electrical and Reliability Characteristics of HfLaTiO-Gated Metal–Oxide–Semiconductor Capacitors With Various Ti Concentrations},
  author={Chin-Lung Cheng and J. Henry Horng and Yu-Zhen Wu},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2012},
  volume={12},
  pages={399-405}
}
Electrical and reliability characteristics of metal-oxide-semiconductor (MOS) capacitors with various-Ti-concentration-doped HfLaTiO/interfacial layer (IL)/P-Si(100) stacked structures are presented. Charge carrier generation/trapping and the related mechanisms of a thin HfLaTiO/IL stack in n-type MOS capacitors have been investigated under constant gate voltage stress. The mechanisms related to larger positive charge generation in the HfLaTiO gate dielectric bulk can be attributed to Ti-doped… CONTINUE READING