Electrical and Reliability Characteristics of High- $\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors

Abstract

In this letter, we investigated the electrical and reliability characteristics of high- κ HoTiO<sub>3</sub> amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO<sub>3</sub> dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high… (More)

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