Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature

@inproceedings{Shaban2008ElectricalAP,
  title={Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature},
  author={Mahmoud Ben Shaban and Haruhiko Kondo and Kazuhiro Nakashima and Tsuyoshi Yoshitake},
  year={2008}
}
Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current–voltage characteristics, which was predominantly due to the… CONTINUE READING