Electrical and Optical Properties of 1 MeV-electron irradiated Al x Ga 1-x N

@inproceedings{Hogsed2004ElectricalAO,
  title={Electrical and Optical Properties of 1 MeV-electron irradiated Al x Ga 1-x N},
  author={Michael R. Hogsed and M. Ahoujja and Mee-Yi Ryu and Yung Kee Yeo and James C. Petrosky and Robert L. Hengehold},
  year={2004}
}
  • Michael R. Hogsed, M. Ahoujja, +3 authors Robert L. Hengehold
  • Published 2004
  • Materials Science
  • The optical and electrical properties of Si doped GaN and Al 0.20 Ga 0.80 N films irradiated with 1 MeV electrons at a fluence of 1×10 17 cm −2 are investigated using cathodoluminescence (CL), variable-temperature Hall-effect, and deep level transient spectroscopy (DLTS) measurements. The CL spectra measured at 6 K show peak luminescence intensity of the near band edge decreases, on average, by 50% after electron irradiation, indicating the creation of non-radiative recombination centers which… CONTINUE READING

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