Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

Abstract

Electrical properties of Ga<sub>2</sub>O<sub>3</sub>/GaAs interfaces with GdGaO cap dielectrics used in recent enhancement-mode GaAs-based NMOSFETs which perform in line with theoretical model predictions are presented. Capacitors with GdGaO thickness ranging from 3.0 to 18 nm (0.9 les EOT les 3.9 nm) have been characterized by capacitance-voltage… (More)

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