Electrical Characterization of Thin-Film Structures With Redeposited Sidewalls

Abstract

Accurate electrical characterization of test structures and devices requires identification and correction for parasitic current paths in the measurement network. The sidewalls formed during reactive ion etching of thin-film phase-change material layers in argon plasma can result in parasitic current paths in the structures. In this paper, thin-film… (More)

9 Figures and Tables

Topics

  • Presentations referencing similar topics