Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

@inproceedings{Gotoh1993ElectricalCO,
  title={Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition},
  author={Koji Gotoh and J. Murota and Shin-ich Ono},
  year={1993}
}