Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

Abstract

Due to a larger band offset and a higher permittivity compared to Si<formula formulatype="inline"><tex Notation="TeX"> $_{3}$</tex></formula>N<formula formulatype="inline"><tex Notation="TeX">$_{4}$</tex></formula>, Ge<formula formulatype="inline"><tex Notation="TeX"> $_{3}$</tex></formula>N<formula formulatype="inline"><tex Notation="TeX">$_4$</tex… (More)

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