Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide

@article{Bryant2013ElectricalCA,
  title={Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide},
  author={Peter A Bryant and Annika Lohstroh and Paul J Sellin},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={1432-1435}
}
The electrical characteristics and fast neutron response of a High Temperature Chemical Vapour Deposition (HTCVD) grown semi-insulating bulk SiC wafer has been measured. Current-Voltage measurements demonstrated a low leakage current in the region of 10-10 to 10-12v A with a bulk resistivity of at least 1012-1013 Ω.cm. Alpha particle spectroscopy measurements demonstrated an electron charge collection efficiency of up to 90% with reasonable reproducibility of the acquired spectra. Evidence of… Expand

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