Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon

  title={Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon},
  author={Mohamed T. Ghoneim and Jhonathan Prieto Rojas and Chadwin D. Young and Gennadi Bersuker and Muhammad. M. Hussain},
  journal={IEEE Transactions on Reliability},
We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages… 

Figures and Tables from this paper

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance

High-Performance MIM Capacitors for a Secondary Power Supply Application

In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology and has potential application as a secondary power supply.

Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors

Flexible metal-oxide-semiconductor capacitors in a vertical structure using the single-crystalline Si nanomembrane (NM) with a HfO2/Al2O3 bilayer gate stack prepared by atomic layer deposition have

Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates

An optimized approach is applied to realize the transfer printing of an In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane (NM) onto a plastic substrate with high quality. Bendable

Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.

How CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100).

Performance Degradation of Flexible Si Nanomembrane Transistors With Al2O3 and SiO2 Dielectrics Under Mechanical Stress

Flexible Si nanomembrane transistors with Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> gate dielectrics were fabricated, and their mechanical stability was compared under various bending

Solid-state Memory on Flexible Silicon for Future Electronic Applications

Solid-state Memory on Flexible Silicon for Future Electronic Applications Mohamed Tarek Ghoneim Advancements in electronics research triggered a vision of a more connected world, touching new

Free form CMOS electronics: Physically flexible and stretchable

Free form (physically flexible and stretchable) electronics can be used for applications which are unexplored today due to the rigid and brittle nature of the state-of-the-art electronics. Therefore,



Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up

Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a

Flexible semi‐transparent silicon (100) fabric with high‐k/metal gate devices

Can we build a flexible and transparent truly high performance computer? High‐k/metal gate stack based metal–oxide–semiconductor capacitor devices are monolithically fabricated on industry's most

High-performance flexible thin-film transistors exfoliated from bulk wafer.

This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs).

Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The model accounts

Time-dependent dielectric breakdown evaluation of deep trench capacitor with sidewall hemispherical, polysilicon grains for gigabit DRAM technology

The continued scaling of DRAM cell sizes requires maintaining a sufficiently high storage capacitance per cell. Capacitance enhancement technique using hemispherical-polysilicon grains (HPG) in deep

Reliability of porous low-k dielectrics under dynamic voltage stressing

We investigate porous low-k SiCOH under dynamic voltage stress to provide new insights into electrical breakdown. Our results are consistent with the existence of two breakdown mechanisms: the first

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

N nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells are shown, providing a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.