Electric tuning of direct-indirect optical transitions in silicon

@inproceedings{Noborisaka2014ElectricTO,
  title={Electric tuning of direct-indirect optical transitions in silicon},
  author={J. Noborisaka and Katsuhiko Nishiguchi and Akira Fujiwara},
  booktitle={Scientific reports},
  year={2014}
}
Electronic band structures in semiconductors are uniquely determined by the constituent elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits efficient light emission. Here we report the electrical tuning of the direct/indirect band optical transition in an ultrathin silicon-on-insulator (SOI) gated metal-oxide-semiconductor (MOS) light-emitting diode. A special Si/SiO2 interface formed by high-temperature annealing that shows stronger valley coupling… CONTINUE READING
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