Electric field induced edge-state oscillations in InAs/GaSb quantum wells

  title={Electric field induced edge-state oscillations in InAs/GaSb quantum wells},
  author={Marcos H. L. de Medeiros and Raphael L. R. C. Teixeira and Guilherme M. Sipahi and Luis G. G. V. Dias da Silva},
  journal={Physical Review B},
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge neutrality. However, experimental data showing the presence of edge conductance in the trivial regime suggest that additional experimental signatures are needed to characterize the QSHI phase. Here we show that electric fieldinduced gap… 

Figures and Tables from this paper



Evidence for helical edge modes in inverted InAs/GaSb quantum wells.

This analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al, which persist in spite of sizable bulk conduction and show only a weak magnetic field dependence.

Electrical tuning of helical edge states in topological multilayers.

The comprehensive characterization of GaSb/InAs multilayers creates a basis platform upon which further optimization of III-V heterostructures can be contrasted and is promising to observe massless Dirac fermions with a large Fermi velocity.

Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells

We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to

Quantum Spin Hall Insulator State in HgTe Quantum Wells

The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.

Quantum spin Hall effect in inverted type-II semiconductors.

Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition.

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells.

This work presents an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating and shows that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

Edge Transport in the Trivial Phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride

Robust helical edge transport in gated InAs/GaSb bilayers.

This study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers and quantized plateaus with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples.

Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well.

The results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.