Electric field induced edge-state oscillations in InAs/GaSb quantum wells

@article{deMedeiros2021ElectricFI,
  title={Electric field induced edge-state oscillations in InAs/GaSb quantum wells},
  author={Marcos H. L. de Medeiros and Raphael L. R. C. Teixeira and Guilherme M. Sipahi and Luis G. G. V. Dias da Silva},
  journal={Physical Review B},
  year={2021}
}
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge neutrality. However, experimental data showing the presence of edge conductance in the trivial regime suggest that additional experimental signatures are needed to characterize the QSHI phase. Here we show that electric fieldinduced gap… 
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