Electric-Field-Induced Energy Gap in Few-Layer Graphene

@inproceedings{Tang2011ElectricFieldInducedEG,
  title={Electric-Field-Induced Energy Gap in Few-Layer Graphene},
  author={Kechao Tang and Rui Xiang Qin and Jing Zhou and Heruge Qu and Jiaxin Zheng and Ruixiang Fei and Hong Li and Qiye Zheng and Zhengxiang Gao and Jing Xiao Lu},
  year={2011}
}
We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range… CONTINUE READING

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