Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

  title={Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching},
  author={Shehrin Sayed and Cheng‐Hsiang Hsu and Niklas Roschewsky and See-Hun Yang and Sayeef S. Salahuddin},
  journal={Physical review applied},
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmission coefficient across the structure with an electric-field via the resonant tunneling phenomena… 

Figures from this paper

Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diode

The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real



Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

The experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature.

Deterministic switching of ferromagnetism at room temperature using an electric field

The kinetics of the switching process is examined, something not considered previously in theoretical work, and a deterministic reversal of the DM vector and canted moment using an electric field at room temperature is shown.

Controlling the nonequilibrium interlayer exchange coupling in asymmetric magnetic tunnel junctions.

An oscillatory bias behavior of the fieldlike spin torque, T(perpendicular), in magnetic tunnel junctions, is predicted, which can be selectively controlled via the asymmetry in band filling between the ferromagnetic leads, including tuning the bias-induced reversal of T( perpendicular).

Electric-field control of magnetic order above room temperature.

Ferroelectricity in BaTiO3 crystals is used to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature, correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude.

Magneto-ionic control of interfacial magnetism.

It is shown that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magneto-electric coupling mechanisms, and suggests a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Current-driven excitation of magnetic multilayers

A new mechanism is proposed for exciting the magnetic state of a ferromagnet. Assuming ballistic conditions and using WKB wave functions, we predict that a transfer of vectorial spin accompanies an