Electric Characteristics of Planar Interconnect Technologies for Power MOSFETs

  title={Electric Characteristics of Planar Interconnect Technologies for Power MOSFETs},
  author={Sibylle Dieckerhoff and T. Kirfe and T. F. Wernicke and Christine Kallmayer and Andreas Ostmann and E. Jung and Bernhard Wunderle and Herbert Reichl},
  journal={2007 IEEE Power Electronics Specialists Conference},
In this paper, two planar interconnection technologies for power semiconductors - a Flip Chip solution with a flexible substrate and a Chip-in-Polymer approach - are presented. These technologies substitute the wire bonds which are usually applied to contact the top side pads of power semiconductors. The process flow of the technology developments is explained. Exemplarily, prototypes are built applying fast switching MOSFETs in the voltage class up to 100 V. Based on these prototypes… CONTINUE READING


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