Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.


A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to… (More)
DOI: 10.1039/c5nr04239a