Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers

@article{Pham2007EfficientSO,
  title={Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers},
  author={A. T. Pham and Christoph Jungemann and M. Klawitter and B. Menerzhagen},
  journal={2007 International Semiconductor Device Research Symposium},
  year={2007},
  pages={1-2}
}
Low and high field transport of holes in strained SiGe on insulator inversion layers is studied by solving BTE with a new accurate and efficient non-stochastic method for the first time. Alloy scattering is found to have a strong impact on hole transport. Strain enhances both the low-field mobility and the high-field drift velocity. 

References

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Hoyt " UltrathinBody StrainedSi and SiGe HeterostrcuctureonInsulator MOSFETs

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