Efficient physical defect model applied to PBTI in high-κ stacks


Instabilities in MOS-based devices with various substrates ranging from Si, SiGe, IIIV to 2D channel materials, can be explained by defect levels in the dielectrics and non-radiative multi-phonon (NMP) barriers. However, recent results obtained on single defects have demonstrated that they can show a highly complex behaviour since they can transform between… (More)


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