Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

@article{Hanbicki2002EfficientES,
  title={Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor},
  author={Aubrey T. Hanbicki and Berend T. Jonker and Grigorios Itskos and George Kioseoglou and Angstroem laboratory and Suny Buffalo},
  journal={Applied Physics Letters},
  year={2002},
  volume={80},
  pages={1240-1242}
}
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin… Expand
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Progress toward electrical injection of spin-polarized electrons into semiconductors
  • B. Jonker
  • Computer Science, Materials Science
  • Proc. IEEE
  • 2003
TLDR
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In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling isExpand
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