Efficient Hole Trans Ort Model in War Ed Bands for Use in the Simu P Ation of Si/sige 2 Osfets

Abstract

An analytical geometric model for the valence band in strained and relaxed Sil-,Ge, is presented, which shows good agreement with a 6-band k*p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of 111-V semiconductors, and could… (More)

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Cite this paper

@inproceedings{WatlingEfficientHT, title={Efficient Hole Trans Ort Model in War Ed Bands for Use in the Simu P Ation of Si/sige 2 Osfets}, author={J. R. Watling and A. Asenov} }