Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer.

Abstract

We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.

05102008200920102011201220132014201520162017
Citations per Year

58 Citations

Semantic Scholar estimates that this publication has 58 citations based on the available data.

See our FAQ for additional information.

Cite this paper

@article{Zhao2006EfficientCQ, title={Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer.}, author={Jialong Zhao and Julie A Bardecker and Andrea M. Munro and Michelle Liu and Yuhua Niu and I. Ding and Jingdong Luo and Baoquan Chen and Alex K-Y Jen and David S. Ginger}, journal={Nano letters}, year={2006}, volume={6 3}, pages={463-7} }