Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers
@article{Xiao2014EfficientHY, title={Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers}, author={Zhengguo Xiao and Cheng Bi and Yuchuan Shao and Qingfeng Dong and Qingjiang Wang and Yong-bo Yuan and Chenggong Wang and Y. Gao and Jinsong Huang}, journal={Energy and Environmental Science}, year={2014}, volume={7}, pages={2619-2623} }
We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices.
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