Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

@article{Xiao2014EfficientHY,
  title={Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers},
  author={Zhengguo Xiao and Cheng Bi and Yuchuan Shao and Qingfeng Dong and Qi Wang and Yongbo Yuan and Chenggong Wang and Yongli Gao and Jinsong Huang},
  journal={Energy and Environmental Science},
  year={2014},
  volume={7},
  pages={2619-2623}
}
We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices. 

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