Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

@article{Wang2011EfficiencyAD,
  title={Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes},
  author={C. H. Wang and D. W. Lin and C. Y. Lee and M. A. Tsai and G. L. Chen and H. T. Kuo and W. H. Hsu and H. C. Kuo and T. C. Lu and S. C. Wang and G. C. Chi},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1098-1100}
}
The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV… CONTINUE READING
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