Effects of the crystallographic orientation of Sn grain during electromigration test

The relationship between electromigration behavior and the crystallographic orientation of Sn grains was investigated. The test vehicle was the Cu/Sn−3.0wt%Ag−0.5wt%Cu/Cu dummy flip-chip model, and the applied current density was 15 kA/cm2 at 160 °C. The depletion of Cu atoms at the cathode side is a major cause of the early circuit failure… CONTINUE READING